By Ulrike Woggon
First-class resource of introductory matters to the new topic of quantum dots. it's now a section outdated, now not accounting for the hot advances within the final five years, yet nonetheless the mandatory fabric to begin.
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Extra info for Optical Properties of Semiconductor Quantum Dots
However, the experimentally observed size distributions (see the examples above) are generally much smaller than the ones predicted from an extension of the Lifshiz-Slesov model to epitaxial growth techniques. Therefore, Priester and Lannoo (1995) proposed a model that includes the interplay of surface energy and elastic energies and explains the existence of a critical value for the coverage above which the three-dimensional islandgrowth process dominates. In their model, at first two-dimensional platelets are formed on the substrate.
Some examples will be listed in the following. Moison et al. (1994) report nearly pyramidal quantum dots of 3 nm height and 12 nm half-base with a dispersion of sizes of only =t:15%. 7 monolayers and the average interdot distance 60 nm. Similar results have been obtained 40 2. Growth of Nanocrystals by Marzin et al. (1994a). 7 monolayers. Then the growth is interrupted to wait for the evolution of these islands into equilibrium. 8 nm height, 24 nm diameter and 15 % size fluctuation. For the inter-island distance, a value of 55 nm has been obtained.
The transition energy can be tuned by the core radius, the thickness of the well, and the thickness of the outermost shell. The new lowest electronic transition lies between the bulk excitonic energies of CdS and HgS. To summarize this section, both preparation methods reported in Sects. 2, the growth in glass matrices and the growth in organic or related matrices, have their advantages. To achieve fast nucleation and slow growth of the nanocrystals, the chemical preparation methods using coordinating solvents seem to be very promising.
Optical Properties of Semiconductor Quantum Dots by Ulrike Woggon