Introduction to Space Charge Effects in Semiconductors by Karl W. Böer (auth.) PDF

By Karl W. Böer (auth.)

ISBN-10: 3642022359

ISBN-13: 9783642022357

ISBN-10: 3642022367

ISBN-13: 9783642022364

This ebook is the main accomplished one to explain the fundamentals of space-charge results in semiconductors, ranging from uncomplicated rules to complex program in semiconducting units. It makes use of designated analyses of the shipping, Poisson, and continuity equations to illustrate the habit of the answer curves of the whole set of box and present distributions, besides quantitative descriptions of the correct band types of commonplace pn-junction and Schottky barrier units. It emphasizes the relevance to genuine units and units those effects except extra easy versions of networks of diodes and resistors. The publication is principally very important for individuals drawn to element research of sunlight cells and their efficiencies.

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Extra info for Introduction to Space Charge Effects in Semiconductors

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The family parameter of the curves in each of the sub figures is the current density. , for thermodynamic equilibrium. The selection of the current as a family parameter is necessary for obtaining the numerical solution of the set of controlling differential equations. Then, as a result, one reads from the solution curves the potential difference at both electrodes. With these one can draw a current–voltage characteristics (see the following chapter) as it is a common characterization of semiconductor devices.

This boundary can be given as • An nn+ -junction, described in the previous sections of this chapter (for more details, see Lampert and Mark, 1970), 26 It is an expression coined to indicate similarity to the current in a vacuum diode. 36 • • 2 Creation of Space-Charge Regions in Solids A metal-semiconductor contact in which the metal work function is so low that the electron density at the interface is substantially larger than in the semiconductor bulk (Taylor and Lalevic, 1977), or by external means, such as By optical excitation with photon energies in excess of the band-gap that increases the majority carrier density near the illuminated surface substantially (Silver and Shaw, 1976).

In addition to the electrostatic electron potential ψn (x), one recognizes as a very useful variable the electrochemical potential, also referred to as the Fermi potential, (1/e)EF , which relates to the electrostatic electron 10 11 This does not imply that the effect of the junction on the current (see Sect. 4) disappears: Even though in the field and potential distributions the nn-junction with sufficient reverse bias looks like a smooth connection between low and highly conductive semiconductors, the width of the highly conductive material is reduced with further increased reverse bias, thereby reducing the device conductance.

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Introduction to Space Charge Effects in Semiconductors by Karl W. Böer (auth.)

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