New PDF release: Infrared Ellipsometry on Semiconductor Layer Structures:

By Mathias Schubert

ISBN-10: 3540232494

ISBN-13: 9783540232490

ISBN-10: 3540447016

ISBN-13: 9783540447016

The research of semiconductor-layer buildings utilizing infrared ellipsometry is a quickly starting to be box inside optical spectroscopy. This publication deals uncomplicated insights into the options of phonons, plasmons and polaritons, and the infrared dielectric functionality of semiconductors in layered constructions. It describes how pressure, composition, and the nation of the atomic order inside advanced layer buildings of multinary alloys might be made up our minds from an infrared ellipsometry exam. unique emphasis is given to free-charge-carrier homes, and magneto-optical results.

A extensive variety of experimental examples are defined, together with multinary alloys of zincblende and wurtzite constitution semiconductor fabrics, and destiny functions equivalent to natural layer buildings and hugely correlated electron platforms are proposed.

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Additional info for Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons, and Polaritons

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Three SP branches emerge at frequencies ωs1 , ωs2 , and ωs4 shown in Fig. 3a. 16 The minimum in FTM for mode BSP− is weak for small thickness d, and drawn here as dotted line. All SP modes undergo slight changes with increasing d, and the inset enlarges that for FSP. Two SGW modes occur with strong thickness dependence. Both SGW branches merge with modes BSP+,− for d → 0, and are therefore termed SGW+,− accordingly. Because ωs1 and ωs2 depend on ωp , modes BSP+,− and SGW+,− are extremely sensitive to the free-charge-carrier properties.

Gibart, Solid State Commun. 106, 491 (1998). 37 23. H. Harima, T. Inoue, S. Nakashima, K. Furukawa, and M. Taneya, Appl. Phys. Lett. 73, 2000 (1998). 37 24. A. A. Kukharskii, Sol. State Com. 13, 1761 (1973). 37 References 43 25. A. Kasic, M. Schubert, S. Einfeld, D. Hommel, and T. Tiwald, Phys. Rev. B 62, 7365 (2000). 37 26. A. Kasic, M. Schubert, B. Kuhn, F. Scholz, S. Einfeldt, and D. Hommel, J. Appl. Phys. 87, 3720 (2001). 37 4 Polaritons in Semiconductor Layer Structures The infrared optical response of layered structures composed of polar semiconductor materials is strongly influenced by resonant excitation of phononand plasmon-supported bulk polaritons.

9. a and b: Total-internal-reflection symmetric prism configurations used for observation of SP modes at (bulk-like) metal surfaces (Otto-configuration, Fig. 9a), or at thin metal films (Kretschmann-configuration, Fig. 9b). In both cases a “gap” medium, usually air or vacuum, with index of refraction smaller than the prism material is involved. Analogous situations occur within a polar semiconductor layer structure above the LO (or likewise the LPP) mode frequencies, where either the film (Fig. 9c, the analogue of the Otto-configuration) or the half-infinite substrate (Fig.

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Infrared Ellipsometry on Semiconductor Layer Structures: Phonons, Plasmons, and Polaritons by Mathias Schubert


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